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3077 SOP-4 Original Transistor inverter circuit mosfet/Diode Zener IC Chips
3077 SOP-4 Original Transistor inverter circuit mosfet/Diode Zener IC Chips
3077 SOP-4 Original Transistor inverter circuit mosfet/Diode Zener IC Chips
3077 SOP-4 Original Transistor inverter circuit mosfet/Diode Zener IC Chips
3077 SOP-4 Original Transistor inverter circuit mosfet/Diode Zener IC Chips
3077 SOP-4 Original Transistor inverter circuit mosfet/Diode Zener IC Chips
3077 SOP-4 Original Transistor inverter circuit mosfet/Diode Zener IC Chips
3077 SOP-4 Original Transistor inverter circuit mosfet/Diode Zener IC Chips

3077 SOP-4 Original Transistor inverter circuit mosfet/Diode Zener IC Chips

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≥5000 Pieces
US $0.45
≥50000 Pieces
US $0.35
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Quick Details

Place of Origin:
Jiangsu, China
Product Name:
3077 mosfet
Channel:
N-Channel
Usage:
Electronic Components
Package:
TO220
brand:
Yaren
Place of Origin::
Jiangsu, China (Mainland)
Certifications::
SGS ISO 9000
Condition::
New & Unused, Original sealed
QUALITY WARRANTY::
365 DAYS
Application::
Standard

Quick Details

Model Number:
YR150N08 TO-220
Brand Name:
Yaren
Package Type:
Surface Mount
Place of Origin:
Jiangsu, China
Product Name:
3077 mosfet
Channel:
N-Channel
Usage:
Electronic Components
Package:
TO220
brand:
Yaren
Place of Origin::
Jiangsu, China (Mainland)
Certifications::
SGS ISO 9000
Condition::
New & Unused, Original sealed
QUALITY WARRANTY::
365 DAYS
Application::
Standard
Product Description

3077 SOP-4 Original Transistor inverter circuit mosfet/Diode Zener IC Chips

details

Trade Terms: EXW, FOB shanghai, CIF.
Payment Terms: T/T, Western Union, PayPal.
Delivery Time: 4-7 working days for making sample. 12 to 15 working days for production.
Packing: Packaging Details 50pcs per tube,1000pcs(20tubes) per inner box, (10inner boxes) per carton
Supply Ability: 600000pcs
package TO-220,TO-252,TO-263,TO-247,TO-220F etc,or customized .
Shipping: By sea, By air or By express delivery (DHL/UPS/FEDEX)
MOQ: 1000 PCS
Place of Origin: wuxi City, Jiangsu Province, China
Certificate: ISO9001 SGS

Parametrics

model main parameter package
drain current
ID(A)
Drain source breakdown voltage
VDSS(V)
Drain source resistance
RDSON(Ω)

YR150N08 150 80 ≤0.0048 TO-220

package type: To-220

The TO-220 package outline is an in-line package that is commonly used in high-power transistors, small and medium-sized integrated circuits, and the like.

Among them, TO is an abbreviation of Transistor Outline. Usually, the TO-220 is a single-row in-line, which can usually lead to 3, 5 or 7 feet.

i f you need to check all packing types and all models ,a PDF file will be provided ,please contact us for it .thanks.

Packaging & Shipping

pacakge packing size(CM) N.W(KG) G.W(KG)
TO-220 1000pcs/box 56*14*4 2.68 2.8
5000pcs/carton 57*23.5*16.5 13.4 14.5

Description

By investing significantly in R & D we continually expand our portfolio with state-of-the-art small-signal and power MOSFET solutions. Our extensive portfolio offers the flexibility you need in today's market, so you can easily choose the best fit for your systems. Our market leading technologies ensure the highest reliability and performance, and advanced packages strengthen resistance and thermal properties while reducing size and cost.

Foc us Mosfet applications

Electric Power Steering

Engine management

Integrated starter generator

Transmission Control

Automotive Lighting

Braking (ABS)

Climate control

Protection Modules for Lithium Batteries

Power management of portable digital products such as mobile phones and tablets

Power Supply for Consumer Electronic Products such as LED TV

Electric vehicle controller

Power Supply, Inverter and Various Power Supply

LED lighting

Key features and benefits:

Key features and benefits

N-channel and P-channel

Low RDSon down to 205

ID up to 2.28 A

Low voltage drive (VGS(th) = 0.65 V [typ])

Voltage range of 20 V to 60 V

ESD protection of more than 3 kV

1.0 mm x 0.6 mm footprint

Power dissipation (Ptot) of 360 mW

Low FOM(Rdson*Qg)

High avalanche energy, 100% pass EAS testing

Low Qrr, low Irm

High ESD ability

Reatability and consistency of electrical parameter

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