- Product Details
- {{item.text}}
Quick Details
-
Package Type:
-
Throught Hole
-
Series:
-
standard
-
Mounting Type:
-
standard, Through Hole
-
Description:
-
transistor
-
Place of Origin:
-
Guangdong, China
-
D/C:
-
New
-
Application:
-
transistor
-
Cross Reference:
-
standard
-
Brand:
-
transistor
-
Current - Collector (Ic) (Max):
-
standard
-
Voltage - Collector Emitter Breakdown (Max):
-
standard
-
Vce Saturation (Max) @ Ib, Ic:
-
standard
-
Current - Collector Cutoff (Max):
-
standard
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
standard
-
Power - Max:
-
standard
-
Frequency - Transition:
-
standard
-
Operating Temperature:
-
standard
-
Package / Case:
-
standard
-
Resistor - Base (R1):
-
standard
-
Resistor - Emitter Base (R2):
-
standard
-
FET Type:
-
standard
-
Drain to Source Voltage (Vdss):
-
standard
-
Current - Continuous Drain (Id) @ 25°C:
-
standard
-
Rds On (Max) @ Id, Vgs:
-
standard
-
Vgs(th) (Max) @ Id:
-
standard
-
Gate Charge (Qg) (Max) @ Vgs:
-
standard
-
Input Capacitance (Ciss) (Max) @ Vds:
-
standard
-
Frequency:
-
standard
-
Current Rating (Amps):
-
standard
-
Noise Figure:
-
standard
-
Power - Output:
-
standard
-
Voltage - Rated:
-
standard
-
Drive Voltage (Max Rds On, Min Rds On):
-
standard
-
Vgs (Max):
-
standard
-
IGBT Type:
-
standard
-
Configuration:
-
standard
-
Vce(on) (Max) @ Vge, Ic:
-
standard
-
Input Capacitance (Cies) @ Vce:
-
standard
-
Input:
-
standard
-
NTC Thermistor:
-
standard
-
Voltage - Breakdown (V(BR)GSS):
-
standard
-
Current - Drain (Idss) @ Vds (Vgs=0):
-
standard
-
Current Drain (Id) - Max:
-
standard
-
Voltage - Cutoff (VGS off) @ Id:
-
standard
-
Resistance - RDS(On):
-
standard
-
Voltage:
-
standard
-
Voltage - Output:
-
standard
-
Voltage - Offset (Vt):
-
standard
-
Current - Gate to Anode Leakage (Igao):
-
standard
-
Current - Valley (Iv):
-
standard
-
Current - Peak:
-
standard
-
Applications:
-
standard
-
DC:
-
New
Quick Details
-
Model Number:
-
original
-
Type:
-
transistor
-
Brand Name:
-
original
-
Package Type:
-
Throught Hole
-
Series:
-
standard
-
Mounting Type:
-
standard, Through Hole
-
Description:
-
transistor
-
Place of Origin:
-
Guangdong, China
-
D/C:
-
New
-
Application:
-
transistor
-
Cross Reference:
-
standard
-
Brand:
-
transistor
-
Current - Collector (Ic) (Max):
-
standard
-
Voltage - Collector Emitter Breakdown (Max):
-
standard
-
Vce Saturation (Max) @ Ib, Ic:
-
standard
-
Current - Collector Cutoff (Max):
-
standard
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
standard
-
Power - Max:
-
standard
-
Frequency - Transition:
-
standard
-
Operating Temperature:
-
standard
-
Package / Case:
-
standard
-
Resistor - Base (R1):
-
standard
-
Resistor - Emitter Base (R2):
-
standard
-
FET Type:
-
standard
-
Drain to Source Voltage (Vdss):
-
standard
-
Current - Continuous Drain (Id) @ 25°C:
-
standard
-
Rds On (Max) @ Id, Vgs:
-
standard
-
Vgs(th) (Max) @ Id:
-
standard
-
Gate Charge (Qg) (Max) @ Vgs:
-
standard
-
Input Capacitance (Ciss) (Max) @ Vds:
-
standard
-
Frequency:
-
standard
-
Current Rating (Amps):
-
standard
-
Noise Figure:
-
standard
-
Power - Output:
-
standard
-
Voltage - Rated:
-
standard
-
Drive Voltage (Max Rds On, Min Rds On):
-
standard
-
Vgs (Max):
-
standard
-
IGBT Type:
-
standard
-
Configuration:
-
standard
-
Vce(on) (Max) @ Vge, Ic:
-
standard
-
Input Capacitance (Cies) @ Vce:
-
standard
-
Input:
-
standard
-
NTC Thermistor:
-
standard
-
Voltage - Breakdown (V(BR)GSS):
-
standard
-
Current - Drain (Idss) @ Vds (Vgs=0):
-
standard
-
Current Drain (Id) - Max:
-
standard
-
Voltage - Cutoff (VGS off) @ Id:
-
standard
-
Resistance - RDS(On):
-
standard
-
Voltage:
-
standard
-
Voltage - Output:
-
standard
-
Voltage - Offset (Vt):
-
standard
-
Current - Gate to Anode Leakage (Igao):
-
standard
-
Current - Valley (Iv):
-
standard
-
Current - Peak:
-
standard
-
Applications:
-
standard
-
DC:
-
New
Contact us:
WeChat/Phone+8613592800114
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