YZPST high quality power capsule package thyristor 2200V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I _T(AV)

1300

A

Sinewave,180 ^o conduction,T _c =65 ^o C

RMS value of on-state current

I _TRMS

2000

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

I _TSM

20000

18000

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180 ^o conduction, T _j = 125 ^o C

10.0 msec (50Hz), sinusoidal wave-

shape, 180 ^o conduction, T _j = 125 ^o C

I square t

I ² t

1.7x10 ⁶

A ² s

8.3 msec and 10.0 msec

Latching current

I _L

800

mA

V _D = 24 V; R _L = 12 ohms

Holding current

I _H

400

mA

V _{D =} 24 V; I = 2.5 A

Peak on-state voltage

V _TM

1.75

V

I _TM = 3000 A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

6 00

A/ m s

Switching from V _DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

2 00

A/ m s

Switching from V _DRM £ 1000 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P _GM

200

W

t _p = 40 us

Average gate power dissipation

P _G(AV)

5

W

Peak gate current

I _GM

10

A

Gate current required to trigger all units

I _GT

300

150

125

mA

mA

mA

V _D = 6 V;R _L = 3 ohms;T _j = -40 ^o C

V _D = 6 V;R _L = 3 ohms;T _j = +25 ^o C

V _D = 6 V;R _L = 3 ohms;T _j = +125 ^o C

Gate voltage required to trigger all units

V _GT

0.30

5

3

V

V

V

V _D = 6 V;R _L = 3 ohms;T _j = -40 ^o C

V _D = 6 V;R _L = 3 ohms;T _j = 0-125 ^o C

V _D = Rated V _DRM ; R _L = 1000 ohms;

T _j = + 125 ^o C

Peak negative voltage

V _GRM

5

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t _d

1.5

0.7

m s

I _TM = 50 A; V _D = Rated V _DRM

Gate pulse: V _G = 20 V; R _G = 20 ohms; t _r = 0.1 m s; t _p = 20 m s

Turn-off time (with V _R = -50 V)

t _q

250

150

m s

I _TM = 1000 A; di/dt = 25 A/ m s;

V _R ³ -50 V; Re-applied dV/dt = 20 V/ m s linear to 80% V _DRM ; V _G = 0;

T _j = 125 ^o C; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Q _rr

*

m C

I _TM = 1000 A; di/dt = 25 A/ m s;

V _R ³ -50 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T _j

-40

+125

^o C

Storage temperature

T _stg

-40

+150

^o C

Thermal resistance - junction to case

R _{Q (j-c)}

0.025

0.050

^o C/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

R _{Q (c-s)}

0.010

0.020

^o C/W

Double sided cooled *

Single sided cooled *

Mounting force

P

24.5

26.7

kN

Weight

W

460

g