- Product Details
- {{item.text}}
Quick Details
-
Application:
-
Optical communication/Sensing detection
-
Max. Forward Voltage:
-
3.6V
-
Max. Reverse Voltage:
-
20V
-
Max. Forward Current:
-
33mA
-
Max. Reverse Current:
-
200mA
-
Technology:
-
standard
-
Voltage - Peak Reverse (Max):
-
standard
-
Current - Average Rectified (Io):
-
33mA
-
Voltage - Forward (Vf) (Max) @ If:
-
standard
-
Current - Reverse Leakage @ Vr:
-
standard
-
Operating Temperature:
-
-40-85℃
-
Mounting Type:
-
standard
-
Package / Case:
-
standard
-
Diode Configuration:
-
standard
-
Voltage - DC Reverse (Vr) (Max):
-
standard
-
Current - Average Rectified (Io) (per Diode):
-
standard
-
Reverse Recovery Time (trr):
-
standard
-
Capacitance @ Vr, F:
-
standard
-
Current - Max:
-
33mA
-
Resistance @ If, F:
-
standard
-
Power Dissipation (Max):
-
standard
-
Capacitance Ratio:
-
standard
-
Capacitance Ratio Condition:
-
standard
-
Configuration:
-
standard
-
Voltage - Zener (Nom) (Vz):
-
standard
-
Tolerance:
-
standard
-
Impedance (Max) (Zzt):
-
1kΩ
-
Description:
-
photodiode, 25G 850nm PIN-TIA photodiode
Quick Details
-
Model Number:
-
25G 850nm PIN-TIA
-
Brand Name:
-
SAN-U
-
Place of Origin:
-
Fujian, China
-
Application:
-
Optical communication/Sensing detection
-
Max. Forward Voltage:
-
3.6V
-
Max. Reverse Voltage:
-
20V
-
Max. Forward Current:
-
33mA
-
Max. Reverse Current:
-
200mA
-
Technology:
-
standard
-
Voltage - Peak Reverse (Max):
-
standard
-
Current - Average Rectified (Io):
-
33mA
-
Voltage - Forward (Vf) (Max) @ If:
-
standard
-
Current - Reverse Leakage @ Vr:
-
standard
-
Operating Temperature:
-
-40-85℃
-
Mounting Type:
-
standard
-
Package / Case:
-
standard
-
Diode Configuration:
-
standard
-
Voltage - DC Reverse (Vr) (Max):
-
standard
-
Current - Average Rectified (Io) (per Diode):
-
standard
-
Reverse Recovery Time (trr):
-
standard
-
Capacitance @ Vr, F:
-
standard
-
Current - Max:
-
33mA
-
Resistance @ If, F:
-
standard
-
Power Dissipation (Max):
-
standard
-
Capacitance Ratio:
-
standard
-
Capacitance Ratio Condition:
-
standard
-
Configuration:
-
standard
-
Voltage - Zener (Nom) (Vz):
-
standard
-
Tolerance:
-
standard
-
Impedance (Max) (Zzt):
-
1kΩ
-
Description:
-
photodiode, 25G 850nm PIN-TIA photodiode
Specification
25Gbps 850nm PIN-TIA TO-CAN Series
Features：
● Data rates up to 25 Gbps.
● 850nm multimode.
● Single +3.3V Power Supply. ● -40℃ to 85℃ Operation.
● Received signal strength indicator(RSSI).
Applications：
●High speed Data Communication.
|
Parameter
|
Symbol
|
Min.
|
Max.
|
Unit
|
|
Optical Input Power
|
Pin
|
—
|
5
|
dBm
|
|
Operating Temperature
|
Top
|
-40
|
+85
|
℃
|
|
Storage Temperature
|
Tstg
|
-40
|
+85
|
℃
|
|
Lead Solder Temperature
|
—
|
—
|
260
|
℃
|
|
Lead Solder Time
|
—
|
—
|
10
|
s
|
|
Absolute Maximum Ratings
|
|
|
|
|
|
|
||||||
|
Parameter
|
Symbol
|
Test Conditions
|
Min.
|
Typ.
|
Max.
|
Unit
|
||||||
|
Supply Voltage
|
Vcc
|
—
|
2.97
|
3.3
|
3.63
|
V
|
||||||
|
Supply Current
|
Icc
|
Vcc=3.3V
|
—
|
26
|
33
|
mA
|
||||||
|
Wavelength Range
|
λ
|
Vcc=3.3V
|
820
|
850
|
860
|
nm
|
||||||
|
RSSI Dark Current
|
Id
|
Vcc=3.3V
|
—
|
—
|
100
|
nA
|
||||||
|
Bandwidth
|
BW
|
-3dB
|
--
|
21
|
—
|
GHz
|
||||||
|
Overload
|
OL
|
Vcc=3.3V
|
-3
|
—
|
—
|
dBm
|
||||||
|
Sensitivity
|
Sen
|
25.78Gbps,PRBS31
850nm,ER=4dB,
BER=10E-12
|
—
|
—
|
-9
|
dB
|
||||||
Product Description
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