- Product Details
- {{item.text}}
Quick Details
-
Place of Origin:
-
China
-
D/C:
-
37
-
Application:
-
lighting
-
Max. Forward Voltage:
-
6V
-
Max. Reverse Voltage:
-
5V
-
Max. Forward Current:
-
1.2mA
-
Max. Reverse Current:
-
5uA
-
Diode Type:
-
5.6
-
Technology:
-
semiconductor
-
Voltage - Peak Reverse (Max):
-
2.5
-
Current - Average Rectified (Io):
-
18
-
Voltage - Forward (Vf) (Max) @ If:
-
-
-
Current - Reverse Leakage @ Vr:
-
-
-
Operating Temperature:
-
-10~40°C, -10~40°C
-
Mounting Type:
-
soldering
-
Package / Case:
-
TO 56
-
Diode Configuration:
-
standard
-
Voltage - DC Reverse (Vr) (Max):
-
30v
-
Current - Average Rectified (Io) (per Diode):
-
17
-
Reverse Recovery Time (trr):
-
standard
-
Capacitance @ Vr, F:
-
standard
-
Current - Max:
-
standard
-
Resistance @ If, F:
-
standard
-
Power Dissipation (Max):
-
7mw
-
Capacitance Ratio:
-
standard
-
Capacitance Ratio Condition:
-
N/A
-
Q @ Vr, F:
-
not available
-
Configuration:
-
standard
-
Voltage - Zener (Nom) (Vz):
-
standard
-
Tolerance:
-
stardard
-
Power - Max:
-
7mw
-
Impedance (Max) (Zzt):
-
standard
-
Material:
-
Brass
-
Wavelength:
-
650nm
-
Packing type:
-
Through Hole
-
Max forward voltage:
-
6v
-
Max reverse voltage:
-
5v
-
Operation current:
-
1.2mA
-
Storage Temperature:
-
-15~85°C
-
Dimension:
-
3.5*5.6mm
-
Output Power:
-
5mw
Quick Details
-
Model Number:
-
405nm 450nm 635nm 638nm 650nm
-
Brand Name:
-
Sojay
-
Description:
-
standard
-
Place of Origin:
-
China
-
D/C:
-
37
-
Application:
-
lighting
-
Max. Forward Voltage:
-
6V
-
Max. Reverse Voltage:
-
5V
-
Max. Forward Current:
-
1.2mA
-
Max. Reverse Current:
-
5uA
-
Diode Type:
-
5.6
-
Technology:
-
semiconductor
-
Voltage - Peak Reverse (Max):
-
2.5
-
Current - Average Rectified (Io):
-
18
-
Voltage - Forward (Vf) (Max) @ If:
-
-
-
Current - Reverse Leakage @ Vr:
-
-
-
Operating Temperature:
-
-10~40°C, -10~40°C
-
Mounting Type:
-
soldering
-
Package / Case:
-
TO 56
-
Diode Configuration:
-
standard
-
Voltage - DC Reverse (Vr) (Max):
-
30v
-
Current - Average Rectified (Io) (per Diode):
-
17
-
Reverse Recovery Time (trr):
-
standard
-
Capacitance @ Vr, F:
-
standard
-
Current - Max:
-
standard
-
Resistance @ If, F:
-
standard
-
Power Dissipation (Max):
-
7mw
-
Capacitance Ratio:
-
standard
-
Capacitance Ratio Condition:
-
N/A
-
Q @ Vr, F:
-
not available
-
Configuration:
-
standard
-
Voltage - Zener (Nom) (Vz):
-
standard
-
Tolerance:
-
stardard
-
Power - Max:
-
7mw
-
Impedance (Max) (Zzt):
-
standard
-
Material:
-
Brass
-
Wavelength:
-
650nm
-
Packing type:
-
Through Hole
-
Max forward voltage:
-
6v
-
Max reverse voltage:
-
5v
-
Operation current:
-
1.2mA
-
Storage Temperature:
-
-15~85°C
-
Dimension:
-
3.5*5.6mm
-
Output Power:
-
5mw
405nm 450nm 635nm 638nm 650nm 808nm 850nm 940nm 980nm 5mw 100mw 200mw Laser Diode
|
SPECIFICATION |
650nm laser diode |
|
|
1 |
Dimensions |
3.5*5.6mm |
|
2 |
Max forward voltage |
6V |
|
3 |
Operating current |
1.2mA |
|
4 |
Output power |
5mW |
|
5 |
Operating temp.rage |
-10~40°C |
|
6 |
Storage temp.range |
-15~85 °C |
|
7 |
Packing type |
Through Hole |
|
8 |
Material |
Brass |
|
9 |
Operating voltage |
2.-2.5v |
|
10 |
Mean time to failure(MTTF) |
≥8 000h |
