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High Purity 3N5  W Sputtering Target Tungsten Sputtering Target
High Purity 3N5  W Sputtering Target Tungsten Sputtering Target
High Purity 3N5  W Sputtering Target Tungsten Sputtering Target
High Purity 3N5  W Sputtering Target Tungsten Sputtering Target
High Purity 3N5  W Sputtering Target Tungsten Sputtering Target
High Purity 3N5  W Sputtering Target Tungsten Sputtering Target
High Purity 3N5  W Sputtering Target Tungsten Sputtering Target
High Purity 3N5  W Sputtering Target Tungsten Sputtering Target

High Purity 3N5 W Sputtering Target Tungsten Sputtering Target

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≥1 Sheets
US $50
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Quick Details

Model Number:
ZP-WTarget1
Shape:
Rectangular, cylindrical, shape can be customized
Material:
W
Chemical Composition:
W
Available Purity(%):
99.95(3N5)
Melting point:
3407C
Density(g/CM3):
19.35
Boiling point(C):
5657C

Quick Details

Application:
Laboratory Battery research
Place of Origin:
Fujian, China
Brand Name:
Zopin
Model Number:
ZP-WTarget1
Shape:
Rectangular, cylindrical, shape can be customized
Material:
W
Chemical Composition:
W
Available Purity(%):
99.95(3N5)
Melting point:
3407C
Density(g/CM3):
19.35
Boiling point(C):
5657C
Product Description
Features
1.Tungsten targets are mainly used in aerospace, rare earth smelting, electric light source, chemical equipment, metallurgical machinery, smelting equipment, petroleum, etc.
2.There are two forms of tungsten, α and β. At standard temperature and atmospheric pressure, α - type is a stable bcc structure. β - type tungsten can only appear in the presence of oxygen. It is stable below 630 ℃ and converted to α - tungsten above 630 ℃, and this process is irreversible.
3.After spraying and sintering, the tungsten target has the characteristics of 99% density or even higher, average transparent grain diameter of 100um or even smaller, oxygen content of 20ppm or less, deflection angle of 500MPa or so;
Product Name
Tungsten(W)sputtering target
Available Purity(%)
99.95(3N5)
Shape
Planar, round,rectangle
Color
Silvery white
Size
as your request
Melting point(℃)
3407
Density(g/cm³)
19.35
Boiling point(℃)
5657
Technology
Vacuum Melting, Patented thermo-mechanical process and machine work
Application
Semiconductors, Micro-Electronics etc.
Atomic volume
9.53 cm3/mol
Crystal structure and lattice constant
α - W: BCC a = 3.16524 nm (25 ℃)
β-W
Cubic lattice a = 5.046 nm (stable below 630 ℃)
Latent heat of melting
40.13±6.67kJ/mol
Sublimation heat
847.8 kJ/mol(25℃)
Heat of evaporation
823.85 ± 20.9kj/mol (boiling point)
Temperature coefficient of resistance
0.00482 I/℃
Elastic modulus
35000 ~ 38000 MPa (wire)
Torsion modulus
~36000Mpa
Compressibility
2.910-7 cm/kg
surface state
Polish or alkali wash
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