- Product Details
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Quick Details
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Place of Origin:
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Jiangsu, China
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VDS:
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600 V
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ID:
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9.5 A
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Typ RDS(ON):
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0.78Ω
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Package:
-
TO220
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Application:
-
Electronic Products
-
Shipping by:
-
DHL\UPS\Fedex\EMS\HK Post
-
Condition:
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100% Brand
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Payment:
-
Paypal
Quick Details
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Model Number:
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10N60
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Brand Name:
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Yaren
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Package Type:
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Throught Hole
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Place of Origin:
-
Jiangsu, China
-
VDS:
-
600 V
-
ID:
-
9.5 A
-
Typ RDS(ON):
-
0.78Ω
-
Package:
-
TO220
-
Application:
-
Electronic Products
-
Shipping by:
-
DHL\UPS\Fedex\EMS\HK Post
-
Condition:
-
100% Brand
-
Payment:
-
Paypal
General Description
The YR10N60 the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which
reduce the conduction loss, improve switchingperformance
and enhance the avalanche energy. The transistor can be
used in various power switching circuit for system miniaturiz
ation and higher efficiency. which accords with the RoHS.
Features
VDS=600V;ID=9.5A@ VGS=10V;
RDS(ON)<0.90Ω @ VGS=10V
Fast Switching
ESD Improved Capability
Low Reverse transfer capacitances(Typical:15pF)
100% Single Pulse avalanche energy Test
Application
Power switch circuit of adaptor and charger.
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VDS | Drain-Source Voltage (VGS=0V) | 600 | V |
| VGS | Gate-Source Voltage (VDS=0V) | ±30 | V |
| ID(DC) | Drain Current (DC) at Tc=25℃ | 9.5 | A |
| ID(DC) | Drain Current (DC) at Tc=100℃ | 6.5 | A |
| IDM(a1) | Drain Current-Continuous@ Current-Pulsed | 38 | A |
| dv/dt(a3) | Peak Diode Recovery Voltage | 4 | V/ns |
| PD | Maximum Power Dissipation(Tc=25℃) | 120 | W |
| Derating Factor | 0.88 | W/℃ | |
| EAS(a2) | Single Pulse Avalanche Energy | 700 | Mj |
| T L | MaximumTemperature for Soldering | 300 | ℃ |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 To 150 | ℃ |
| R θJC | Thermal Resistance,Junction-to-Case | 1.1 | ℃/W |
| RθJA | Junction-to-Ambient | 62 | ℃/W |
