- Product Details
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Quick Details
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Place of Origin:
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Jiangsu, China
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Channel:
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N-Channel
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Package:
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TO220
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ID (A):
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120A
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VDSS (V):
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80 V
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Condition:
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100% Brand
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Application:
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Electronic Products
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Payment:
-
Paypal
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Shipping:
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DHL UPS FedEx EMS
Quick Details
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Model Number:
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120N08
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Brand Name:
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Yaren
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Package Type:
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Throught Hole
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Place of Origin:
-
Jiangsu, China
-
Channel:
-
N-Channel
-
Package:
-
TO220
-
ID (A):
-
120A
-
VDSS (V):
-
80 V
-
Condition:
-
100% Brand
-
Application:
-
Electronic Products
-
Payment:
-
Paypal
-
Shipping:
-
DHL UPS FedEx EMS
General Description
The YR120N08 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged
EAS capability and ultra low RDS(ON) is suitable for PWM,
load switching especially for E-Bike controller applications.
Features
VDS=82V; ID=120A@ VGS=10V;
RDS(ON)<6.50mΩ @ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Special designed for convertors and power controls
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Uninterruptible power supply
Power switching application
Hard switched and High frequency circuits
| Symbol | Parameter | Value | Unit |
| VDS | Drain-Source Voltage (VGS=0V) | 82 | V |
| VGS | Gate-Source Voltage (VDS=0V) | ±25 | V |
| ID(DC) | Drain Current (DC) at Tc=25℃ | 120 | A |
| ID(DC) | Drain Current (DC) at Tc=100℃ | 84 | A |
| IDM(pluse) | Drain Current-Continuous@ Current-Pulsed (Note 1) | 480 | A |
| dv/dt | Peak Diode Recovery Voltage | 30 | V/ns |
| PD | Maximum Power Dissipation(Tc=25℃) | 168 | W |
| Derating Factor | 1.4 | W/℃ | |
| EAS | Single Pulse Avalanche Energy (Note 2) | 702 | Mj |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 To 175 | ℃ |
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=40V,VG=10V, RG=25Ω
