- Product Details
- {{item.text}}
Quick Details
-
Package Type:
-
Throught Hole
-
Operating Temperature:
-
-50℃~+175℃, -50°C ~ 175°C
-
Series:
-
SiC MOSFET
-
Mounting Type:
-
Through Hole, Through Hole
-
Description:
-
Typical on-Resistance: RDS (on) =80 Mili Ohm(typ.), High Blocking Voltage, 100% Avalanche Test, Good Stability and Uniformity with High EAS
-
Place of Origin:
-
Zhejiang, China
-
Application:
-
Switch Mode Power Supplies, Switch Mode Power Supplies
-
Brand:
-
AKCQH080N120 1200V SiC Power MOSFET
-
Current - Collector (Ic) (Max):
-
36A(TC=25℃), 24A(TC=100℃)
-
Voltage - Collector Emitter Breakdown (Max):
-
1225V
-
Current - Collector Cutoff (Max):
-
120A
-
Power - Max:
-
250W
-
Package / Case:
-
TO-247
-
Drain to Source Voltage (Vdss):
-
1200V
-
Current - Continuous Drain (Id) @ 25°C:
-
36A
-
Rds On (Max) @ Id, Vgs:
-
120 Milli Ohm
-
Vgs(th) (Max) @ Id:
-
4.0V
-
Gate Charge (Qg) (Max) @ Vgs:
-
79nC
-
Input Capacitance (Ciss) (Max) @ Vds:
-
1475pF
-
Current Rating (Amps):
-
36A
-
Voltage - Rated:
-
1200V
-
Drive Voltage (Max Rds On, Min Rds On):
-
2.0-4.0V
-
Voltage - Breakdown (V(BR)GSS):
-
1200V
-
Current - Drain (Idss) @ Vds (Vgs=0):
-
100uA
-
Current Drain (Id) - Max:
-
36A
-
Resistance - RDS(On):
-
80 Milli Ohm
-
Voltage:
-
1200V
-
Voltage - Offset (Vt):
-
-10/+25v
-
Current - Valley (Iv):
-
24A
-
Current - Peak:
-
36A
-
Applications:
-
Switch Mode Power Supplies
-
Transistor Type:
-
SiC MOSFET transistor, N-Channel
-
VDSS:
-
1200V
-
VGSS:
-
-10/+25V
-
Drain Current(TC=25℃):
-
36A
-
Drain Current(TC=100℃):
-
24A
-
Single Pulse Avalanche Energy:
-
300mJ
-
Maximum Power Dissipation(TC=25℃):
-
250W
-
Turn-off Delay Time:
-
18ns
-
Total Gate Charge:
-
79nC
-
Pulsed Drain Current:
-
120A
Quick Details
-
Model Number:
-
AKCQH080N120
-
Type:
-
SiC MOSFET transistor, MOSFET
-
Brand Name:
-
AIKO
-
Package Type:
-
Throught Hole
-
Operating Temperature:
-
-50℃~+175℃, -50°C ~ 175°C
-
Series:
-
SiC MOSFET
-
Mounting Type:
-
Through Hole, Through Hole
-
Description:
-
Typical on-Resistance: RDS (on) =80 Mili Ohm(typ.), High Blocking Voltage, 100% Avalanche Test, Good Stability and Uniformity with High EAS
-
Place of Origin:
-
Zhejiang, China
-
Application:
-
Switch Mode Power Supplies, Switch Mode Power Supplies
-
Brand:
-
AKCQH080N120 1200V SiC Power MOSFET
-
Current - Collector (Ic) (Max):
-
36A(TC=25℃), 24A(TC=100℃)
-
Voltage - Collector Emitter Breakdown (Max):
-
1225V
-
Current - Collector Cutoff (Max):
-
120A
-
Power - Max:
-
250W
-
Package / Case:
-
TO-247
-
Drain to Source Voltage (Vdss):
-
1200V
-
Current - Continuous Drain (Id) @ 25°C:
-
36A
-
Rds On (Max) @ Id, Vgs:
-
120 Milli Ohm
-
Vgs(th) (Max) @ Id:
-
4.0V
-
Gate Charge (Qg) (Max) @ Vgs:
-
79nC
-
Input Capacitance (Ciss) (Max) @ Vds:
-
1475pF
-
Current Rating (Amps):
-
36A
-
Voltage - Rated:
-
1200V
-
Drive Voltage (Max Rds On, Min Rds On):
-
2.0-4.0V
-
Voltage - Breakdown (V(BR)GSS):
-
1200V
-
Current - Drain (Idss) @ Vds (Vgs=0):
-
100uA
-
Current Drain (Id) - Max:
-
36A
-
Resistance - RDS(On):
-
80 Milli Ohm
-
Voltage:
-
1200V
-
Voltage - Offset (Vt):
-
-10/+25v
-
Current - Valley (Iv):
-
24A
-
Current - Peak:
-
36A
-
Applications:
-
Switch Mode Power Supplies
-
Transistor Type:
-
SiC MOSFET transistor, N-Channel
-
VDSS:
-
1200V
-
VGSS:
-
-10/+25V
-
Drain Current(TC=25℃):
-
36A
-
Drain Current(TC=100℃):
-
24A
-
Single Pulse Avalanche Energy:
-
300mJ
-
Maximum Power Dissipation(TC=25℃):
-
250W
-
Turn-off Delay Time:
-
18ns
-
Total Gate Charge:
-
79nC
-
Pulsed Drain Current:
-
120A
COMPANY
INFORMATION
:
Aiko Electronics Technology Co., LTD. is a high-tech enterprise focusing on the design and application of the latest generation of power semiconductor devices (IGBT, MOS &SiC). Our technical team have rich experience in power device design, process research, testing and application. The core members' average working experience in
semiconductor industry is more than 15 years.
EXHIBITION:
PRODUCT INTRODUCTION:
The AKCQH080N120 is a high blocking voltage N-Channel
SiC power MOSFET. This device provide excellent
performance for high voltage power supplies or pulse
circuits.
Features:
•
Typical on-Resistance: R
DS (on)
=80mΩ(typ.)
• High Blocking Voltage
• 100% Avalanche Test
• Good Stability and Uniformity with High E
AS
APPLICATIONS:
- Solar Inverters
- High Voltage DC/DC Converters
- Motor Drivers
- Switch Mode Power Supplies
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