- Product Details
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Quick Details
-
Package Type:
-
TO-220F
-
Operating Temperature:
-
-55℃~+150℃, -55°C ~ 150°C
-
Series:
-
MOSFET
-
Mounting Type:
-
through holes, Through Hole
-
Description:
-
Low Intrinsic Capacitances, Excellent Switching Characteristics, Extended Safe Operating Area, Unrivalled Gate Charge, 100% Avalanche Tested
-
Place of Origin:
-
Zhejiang, China
-
Application:
-
high efficient DC to DC converters
-
Brand:
-
AKF4N65P 650V 4A N-Channel Power MOSFET
-
Current - Collector (Ic) (Max):
-
4.0A(TC=25℃), 2.7A(TC=100℃)
-
Voltage - Collector Emitter Breakdown (Max):
-
650V
-
Vce Saturation (Max) @ Ib, Ic:
-
30V
-
Current - Collector Cutoff (Max):
-
4A
-
Power - Max:
-
50W
-
Package / Case:
-
TO-220F
-
Drain to Source Voltage (Vdss):
-
650V
-
Current - Continuous Drain (Id) @ 25°C:
-
4.0A
-
Rds On (Max) @ Id, Vgs:
-
2.5 Ohm
-
Vgs(th) (Max) @ Id:
-
4.0V
-
Gate Charge (Qg) (Max) @ Vgs:
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14.3nC
-
Input Capacitance (Ciss) (Max) @ Vds:
-
560pF @ 25V
-
Current Rating (Amps):
-
4A
-
Voltage - Rated:
-
650V
-
Drive Voltage (Max Rds On, Min Rds On):
-
2.0V
-
Vgs (Max):
-
4.0V
-
Vce(on) (Max) @ Vge, Ic:
-
10V
-
Input Capacitance (Cies) @ Vce:
-
560pF
-
Voltage - Breakdown (V(BR)GSS):
-
650V
-
Current - Drain (Idss) @ Vds (Vgs=0):
-
10-100uA
-
Current Drain (Id) - Max:
-
4.0A
-
Voltage - Cutoff (VGS off) @ Id:
-
30V
-
Resistance - RDS(On):
-
2.5 Ohm(Max.)
-
Voltage - Output:
-
650V
-
Voltage - Offset (Vt):
-
±30V
-
Current - Valley (Iv):
-
1.25A
-
Current - Peak:
-
4A
-
Applications:
-
fast switching
-
Transistor Type:
-
MOSFET transistor, N-Channel, Enhancement Mode
-
VDSS:
-
650V
-
VGSS:
-
±30V
-
Drain Current(TC=25℃):
-
4A
-
Drain Current(TC=100℃):
-
2.7A
-
Single Pulse Avalanche Energy:
-
120mJ
-
Maximum Power Dissipation(TC=25℃):
-
50W
-
Gate-body leakage Current, Forward:
-
100nA
-
Gate Threshold Voltage:
-
2 V~ 4V
-
Application 1:
-
UPS Applications
-
Application 2:
-
DC-DC Converters and AC-DC Power Supply
Quick Details
-
Model Number:
-
AKF4N65P
-
Type:
-
MOSFET transistor, MOSFET
-
Brand Name:
-
AIKO
-
Package Type:
-
TO-220F
-
Operating Temperature:
-
-55℃~+150℃, -55°C ~ 150°C
-
Series:
-
MOSFET
-
Mounting Type:
-
through holes, Through Hole
-
Description:
-
Low Intrinsic Capacitances, Excellent Switching Characteristics, Extended Safe Operating Area, Unrivalled Gate Charge, 100% Avalanche Tested
-
Place of Origin:
-
Zhejiang, China
-
Application:
-
high efficient DC to DC converters
-
Brand:
-
AKF4N65P 650V 4A N-Channel Power MOSFET
-
Current - Collector (Ic) (Max):
-
4.0A(TC=25℃), 2.7A(TC=100℃)
-
Voltage - Collector Emitter Breakdown (Max):
-
650V
-
Vce Saturation (Max) @ Ib, Ic:
-
30V
-
Current - Collector Cutoff (Max):
-
4A
-
Power - Max:
-
50W
-
Package / Case:
-
TO-220F
-
Drain to Source Voltage (Vdss):
-
650V
-
Current - Continuous Drain (Id) @ 25°C:
-
4.0A
-
Rds On (Max) @ Id, Vgs:
-
2.5 Ohm
-
Vgs(th) (Max) @ Id:
-
4.0V
-
Gate Charge (Qg) (Max) @ Vgs:
-
14.3nC
-
Input Capacitance (Ciss) (Max) @ Vds:
-
560pF @ 25V
-
Current Rating (Amps):
-
4A
-
Voltage - Rated:
-
650V
-
Drive Voltage (Max Rds On, Min Rds On):
-
2.0V
-
Vgs (Max):
-
4.0V
-
Vce(on) (Max) @ Vge, Ic:
-
10V
-
Input Capacitance (Cies) @ Vce:
-
560pF
-
Voltage - Breakdown (V(BR)GSS):
-
650V
-
Current - Drain (Idss) @ Vds (Vgs=0):
-
10-100uA
-
Current Drain (Id) - Max:
-
4.0A
-
Voltage - Cutoff (VGS off) @ Id:
-
30V
-
Resistance - RDS(On):
-
2.5 Ohm(Max.)
-
Voltage - Output:
-
650V
-
Voltage - Offset (Vt):
-
±30V
-
Current - Valley (Iv):
-
1.25A
-
Current - Peak:
-
4A
-
Applications:
-
fast switching
-
Transistor Type:
-
MOSFET transistor, N-Channel, Enhancement Mode
-
VDSS:
-
650V
-
VGSS:
-
±30V
-
Drain Current(TC=25℃):
-
4A
-
Drain Current(TC=100℃):
-
2.7A
-
Single Pulse Avalanche Energy:
-
120mJ
-
Maximum Power Dissipation(TC=25℃):
-
50W
-
Gate-body leakage Current, Forward:
-
100nA
-
Gate Threshold Voltage:
-
2 V~ 4V
-
Application 1:
-
UPS Applications
-
Application 2:
-
DC-DC Converters and AC-DC Power Supply
COMPANY INFORMATION :
Aiko Electronics Technology Co., LTD. is a high-tech enterprise focusing on the design and application of the latest generation of power semiconductor devices (IGBT, MOS &SiC). Our technical team have rich experience in power device design, process research, testing and application. The core members' average working experience in
semiconductor industry is more than 15 years.
EXHIBITION:
PRODUCT INTRODUCTION:
The AKF4N65P is a high voltage power MOSFET and is
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance
and have a high rugged avalanche characteristics .
It can be used in a wide variety applications.
Features:
- LowIntrinsicCapacitances .
- Excellent SwitchingCharacteristics.
- Extended SafeOperatingArea.
- Unrivalled GateCharge:Qg=14nC(Typ.). BV
- DSS=650V,I D =4A
- R DS (on) : 2.50Ohm (Max) @V G =10V
- 100% AvalancheTested
APPLICATIONS:
•
UPS Applications
• DC-DC Converters and AC-DC Power Supply
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