- Product Details
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Quick Details
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Warranty:
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25Years, 30 Years
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Brand Name:
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Jinko
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Model Number:
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400-420W N-Type 54 All Black
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Place of Origin:
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Zhejiang, China
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Panel Dimensions:
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1722x1134x30mm(67.79x44.65x1.18 inch), 1722x1134x30mm(67.79x44.65x1.18 inch)
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Cell Type:
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N-TYPE
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Application:
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Solar Power System,Commercial, Home, Commercial, Industrial
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Junction Box:
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IP68 Rated
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Frame:
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Anodized Aluminium Alloy
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Package Type:
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carton+wooden box+pallet
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Keyword:
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Photovoltaic Panel,Black Solar Panel
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Product name:
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Mono Solar Panel,Monocrystalline Silicon Solar Panels,Pv Panel
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Solar cell:
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A-grade,High Efficiency Solar Panels
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Certificate:
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TUV,CE,IEC,INMERTO
Quick Details
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Cell size:
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182mmx182mm
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Type:
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PERC, Half Cell, Bifacial, Double-glass, All Black, N-TYPE, TOPCON, BIPV
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Panel Efficiency:
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21.51% ±3%
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Warranty:
-
25Years, 30 Years
-
Brand Name:
-
Jinko
-
Model Number:
-
400-420W N-Type 54 All Black
-
Place of Origin:
-
Zhejiang, China
-
Panel Dimensions:
-
1722x1134x30mm(67.79x44.65x1.18 inch), 1722x1134x30mm(67.79x44.65x1.18 inch)
-
Cell Type:
-
N-TYPE
-
Application:
-
Solar Power System,Commercial, Home, Commercial, Industrial
-
Junction Box:
-
IP68 Rated
-
Frame:
-
Anodized Aluminium Alloy
-
Package Type:
-
carton+wooden box+pallet
-
Keyword:
-
Photovoltaic Panel,Black Solar Panel
-
Product name:
-
Mono Solar Panel,Monocrystalline Silicon Solar Panels,Pv Panel
-
Solar cell:
-
A-grade,High Efficiency Solar Panels
-
Certificate:
-
TUV,CE,IEC,INMERTO
Products Description
WHAT CAN WE OFFER YOU
Certifications Zertifizierungen
Our Factory Unsere Fabrik
The traditional P-type cell uses a boron-doped silicon wafer substrate, which easily forms a boron-oxygen pair after initial illumination. It will lead to light-induced degradation after a recombination center is formed by trapping electrons in the silicon wafer substrate. In contrast, the N-type cell silicon wafer substrate is doped with Phosphorus, so there is almost no loss of recombination center formed by the boron-oxygen pair, which greatly reduces light-induced degradation.For example, in TOPCon technology, the structure of the tunnel oxide layer further reduces the sub-surface recombination rate, which greatly optimizes the cell conversion efficiency, and the upper limit can reach 28.2%~28.7%.
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