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The traditional P-type cell uses a boron-doped silicon wafer substrate, which easily forms a boron-oxygen pair after initial illumination. It will lead to light-induced degradation after a recombination center is formed by trapping electrons in the silicon wafer substrate. In contrast, the N-type cell silicon wafer substrate is doped with Phosphorus, so there is almost no loss of recombination center formed by the boron-oxygen pair, which greatly reduces light-induced degradation.For example, in TOPCon technology, the structure of the tunnel oxide layer further reduces the sub-surface recombination rate, which greatly optimizes the cell conversion efficiency, and the upper limit can reach 28.2%~28.7%.