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SUNNYCHIP SQA35N50B MOSFET DISCRETE
SUNNYCHIP SQA35N50B MOSFET DISCRETE

SUNNYCHIP SQA35N50B MOSFET DISCRETE

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Quick Details

Package Type:
Throught Hole
Mounting Type:
THROUGH HOLE, Through Hole
Description:
500V 35A IGBT DISCRETE, TO-3PN PACKAGE
Place of Origin:
China
D/C:
NON
Brand:
MOSFET DISCRETE
Current - Collector (Ic) (Max):
35A
Voltage - Collector Emitter Breakdown (Max):
500V
Vce Saturation (Max) @ Ib, Ic:
NON
Current - Collector Cutoff (Max):
NON
DC Current Gain (hFE) (Min) @ Ic, Vce:
NON
Power - Max:
NON
Frequency - Transition:
NON
Operating Temperature:
NON
Package / Case:
TO-3PN
Resistor - Base (R1):
NON
Resistor - Emitter Base (R2):
NON
FET Type:
NON
FET Feature:
NON
Drain to Source Voltage (Vdss):
NON
Current - Continuous Drain (Id) @ 25°C:
NON
Rds On (Max) @ Id, Vgs:
NON
Vgs(th) (Max) @ Id:
NON
Gate Charge (Qg) (Max) @ Vgs:
NON
Input Capacitance (Ciss) (Max) @ Vds:
NON
Frequency:
NON
Current Rating (Amps):
NON
Noise Figure:
NON
Power - Output:
NON
Voltage - Rated:
NON
Drive Voltage (Max Rds On, Min Rds On):
NON
Vgs (Max):
NON
Vce(on) (Max) @ Vge, Ic:
NON
Input Capacitance (Cies) @ Vce:
NON
Input:
NON
NTC Thermistor:
NON
Voltage - Breakdown (V(BR)GSS):
NON
Current - Drain (Idss) @ Vds (Vgs=0):
NON
Current Drain (Id) - Max:
NON
Voltage - Cutoff (VGS off) @ Id:
NON
Resistance - RDS(On):
NON
Voltage:
NON
Voltage - Output:
NON
Voltage - Offset (Vt):
NON
Current - Gate to Anode Leakage (Igao):
NON
Current - Valley (Iv):
NON
Current - Peak:
NON
Applications:
WELDING MACHINE, INVERTER
Transistor Type:
NON
Part Number:
SQA35N50B

Quick Details

Model Number:
SQA35N50B
Type:
MOSFET, MOSFET 
Brand Name:
SUNNYCHIP
Package Type:
Throught Hole
Mounting Type:
THROUGH HOLE, Through Hole
Description:
500V 35A IGBT DISCRETE, TO-3PN PACKAGE
Place of Origin:
China
D/C:
NON
Brand:
MOSFET DISCRETE
Current - Collector (Ic) (Max):
35A
Voltage - Collector Emitter Breakdown (Max):
500V
Vce Saturation (Max) @ Ib, Ic:
NON
Current - Collector Cutoff (Max):
NON
DC Current Gain (hFE) (Min) @ Ic, Vce:
NON
Power - Max:
NON
Frequency - Transition:
NON
Operating Temperature:
NON
Package / Case:
TO-3PN
Resistor - Base (R1):
NON
Resistor - Emitter Base (R2):
NON
FET Type:
NON
FET Feature:
NON
Drain to Source Voltage (Vdss):
NON
Current - Continuous Drain (Id) @ 25°C:
NON
Rds On (Max) @ Id, Vgs:
NON
Vgs(th) (Max) @ Id:
NON
Gate Charge (Qg) (Max) @ Vgs:
NON
Input Capacitance (Ciss) (Max) @ Vds:
NON
Frequency:
NON
Current Rating (Amps):
NON
Noise Figure:
NON
Power - Output:
NON
Voltage - Rated:
NON
Drive Voltage (Max Rds On, Min Rds On):
NON
Vgs (Max):
NON
Vce(on) (Max) @ Vge, Ic:
NON
Input Capacitance (Cies) @ Vce:
NON
Input:
NON
NTC Thermistor:
NON
Voltage - Breakdown (V(BR)GSS):
NON
Current - Drain (Idss) @ Vds (Vgs=0):
NON
Current Drain (Id) - Max:
NON
Voltage - Cutoff (VGS off) @ Id:
NON
Resistance - RDS(On):
NON
Voltage:
NON
Voltage - Output:
NON
Voltage - Offset (Vt):
NON
Current - Gate to Anode Leakage (Igao):
NON
Current - Valley (Iv):
NON
Current - Peak:
NON
Applications:
WELDING MACHINE, INVERTER
Transistor Type:
NON
Part Number:
SQA35N50B
Packaging & Shipping

The MOSFET discrete devices produced by Nanjing SUNNYCHIP Semiconductor using the new generation planar technology feature low RDS(on) and low switching losses. They are highly suitable for applications such as electric welding machines and inverters.

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